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| IPB09N03LA G OptiMOS(R)2 Power-Transistor Features * Ideal for high-frequency dc/dc converters * Qualified according to JEDEC1) for target applications * N-channel - Logic level * Excellent gate charge x R DS(on) product (FOM) * Very low on-resistance R DS(on) * Superior thermal resistance * 175 C operating temperature * dv /dt rated * Pb-free lead plating; RoHS compliant Product Summary V DS R DS(on),max (SMD version) ID 25 8.9 50 V m A PG-TO263-3-2 Type IPB09N03LA G Package PG-TO263-3-2 Marking 09N03LA Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 C2) T C=100 C Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) Value 50 46 350 75 6 20 Unit A I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 C3) I D=45 A, R GS=25 I D=50 A, V DS=20 V, di /dt =200 A/s, T j,max=175 C mJ kV/s V W C T C=25 C 63 -55 ... 175 55/175/56 J-STD20 and JESD22 Rev. 1.6 page 1 2006-05-11 IPB09N03LA G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area5) Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=20 A V DS=25 V, V GS=0 V, T j=25 C V DS=25 V, V GS=0 V, T j=125 C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=4.5 V, I D=30 A, SMD version V GS=10 V, I D=30 A, SMD version Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=30 A 25 1.2 1.6 0.1 2 1 A V 2.4 62 40 K/W Values typ. max. Unit - 10 10 12.1 100 100 15.1 nA m 22 7.4 1 45 8.9 S 2) Current is limited by bondwire; with an R thJC=2.4 K/W the chip is able to carry 64 See figure 3 3) 4) T j,max=150 C and duty cycle D <0.25 for V GS<-5 V 5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 Rev. 1.6 page 2 2006-05-11 IPB09N03LA G Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics 6) Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage Gate charge total, sync. FET Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage IS I S,pulse V SD T C=25 C V GS=0 V, I F=50 A, T j=25 C V R=15 V, I F=I S, di F/dt =400 A/s 0.99 50 350 1.2 V A Q gs Q g(th) Q gd Q sw Qg V plateau Q g(sync) Q oss V DS=0.1 V, V GS=0 to 5 V V DD=15 V, V GS=0 V V DD=15 V, I D=25 A, V GS=0 to 5 V 4.3 2.0 2.8 5.2 10 3.5 8.7 10 5.7 2.6 4.3 7.3 13 12 14 V nC nC C iss C oss Crss t d(on) tr t d(off) tf V DD=15 V, V GS=10 V, I D=25 A, R G=2.7 V GS=0 V, V DS=15 V, f =1 MHz 1235 474 61 8.9 73 22 3.2 1642 630 92 13 109 33 4.8 ns pF Values typ. max. Unit Reverse recovery charge Q rr - - 10 nC 6) See figure 16 for gate charge parameter definition Rev. 1.6 page 3 2006-05-11 IPB09N03LA G 1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); V GS10 V 70 60 60 50 40 P tot [W] 40 30 20 20 10 0 0 50 100 150 200 I D [A] 0 0 50 100 150 200 T C [C] T C [C] 3 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p 1000 1 s 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 10 limited by on-state resistance 100 10 s 0.5 1 Z thJC [K/W] 0.2 I D [A] 100 s DC 0.1 0.05 10 1 ms 10 ms 0.1 0.02 0.01 single pulse 1 0.1 1 10 100 0.01 10-6 0 10-5 0 10-4 0 10-3 0 10-20 10-1 0 100 1 V DS [V] t p [s] Rev. 1.6 page 4 2006-05-11 IPB09N03LA G 5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS 70 10 V 4.5 V 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS 30 3.2 V 3.5 V 3.8 V 4.1 V 60 4.1 V 25 50 20 40 I D [A] 3.8 V R DS(on) [m] 15 4.5 V 30 3.5 V 10 10 V 20 3.2 V 10 5 3V 2.8 V 0 0 1 2 3 0 0 10 20 30 40 50 60 70 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 100 90 80 8 Typ. forward transconductance g fs=f(I D); T j=25 C 80 70 60 70 60 50 40 30 20 20 10 0 0 1 2 3 4 5 175 C 50 g fs [S] 25 C I D [A] 40 30 10 0 0 20 40 60 80 V GS [V] I D [A] Rev. 1.6 page 5 2006-05-11 IPB09N03LA G 9 Drain-source on-state resistance R DS(on)=f(T j); I D=30 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS parameter: I D 18 16 14 12 2 2.5 200 A 98 % R DS(on) [m] 10 typ V GS(th) [V] 1.5 20 A 8 6 4 2 0 -60 -20 20 60 100 140 180 1 0.5 0 -60 -20 20 60 100 140 180 T j [C] T j [C] 11 Typ. Capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 10000 1000 25 C Ciss 1000 Coss 100 175C 98% 175 C C [pF] I F [A] 25C 98% 100 Crss 10 10 0 5 10 15 20 25 30 1 0.0 0.5 1.0 1.5 2.0 V DS [V] V SD [V] Rev. 1.6 page 6 2006-05-11 IPB09N03LA G 13 Avalanche characteristics I AS=f(t AV); R GS=25 parameter: Tj(start) 100 14 Typ. gate charge V GS=f(Q gate); I D=25 A pulsed parameter: V DD 12 10 150 C 100 C 25 C 5V 15 V 8 20 V 10 V GS [V] 1 10 100 1000 I AV [A] 6 4 2 1 0 0 10 20 t AV [s] Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA 16 Gate charge waveforms 29 V GS 28 27 26 Qg V BR(DSS) [V] 25 24 23 22 21 20 -60 -20 20 60 100 140 180 V g s(th) Q g(th) Q gs Q sw Q gd Q g ate T j [C] Rev. 1.6 page 7 2006-05-11 IPB09N03LA G Package Outline PG-TO263-3-2: Outline PG-TO263-3-2 Footprint Packaging Rev. 1.6 page 8 2006-05-11 IPB09N03LA G Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.6 page 9 2006-05-11 |
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